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Cited by 1,085

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films

Fan, John C. C., Goodenough, John B.·1977·Journal of Applied Physics

Abstract

The In and Sn 3d3/2 and 3d5/2 ESCA peaks and the oxygen 1s peak of Sn-doped In2O3 films were compared with those for In2O3 films and In2O3, SnO, SnO2, and Sn3O4 powders. Comparison of as-grown with sanded surfaces revealed Sn-rich surface layers in.those films having good optical and transport properties. These experimental fins are interpreted with a schematic energy-band model and the assumption that film darkening in Sn-doped In2O3 films is caused by the formation and growth of an Sn3O4-like second phase in the bulk. Suppression of these phase could be accomplished by higher substrate temperatures, which permit equilibrium conditions to be attained. Sn-rich phases to migrate to the films surface, and the tine disproportionates to Sn2+ and Sn4+ ions.

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Metadata

Authors
Fan, J. C. C., & Goodenough, J. B.
Venue
Journal of Applied Physics
Published
1977-08-01
Volume
48
Issue
8
Pages
3524-3531
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2004907704
Cited by
1,085
References
3
FWCI
0.92
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films. https://app.cochat.ai/papers/10.1063/1.324149
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Fan, J. C. C., & Goodenough, J. B. (1977). X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films. Journal of Applied Physics. https://doi.org/10.1063/1.324149

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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