The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.
Why nitrogen cannot lead to p-type conductivity in ZnO
Abstract
Based on electronic structure and atomic size considerations, nitrogen has been regarded as the most suitable impurity for p-type doping in ZnO. However, numerous experimental efforts by many different groups have not resulted in stable and reproducible p-type material, casting doubt on the efficacy of nitrogen as a shallow acceptor. Based on advanced first-principles calculations we find that nitrogen is actually a deep acceptor, with an exceedingly high ionization energy of 1.3 eV, and hence cannot lead to hole conductivity in ZnO. In light of this result, we reexamine prior experiments on nitrogen doping of ZnO.
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ZnO nanostructures for optoelectronics: Material properties and device applications
Djurišić, A. B., Ng, A. M. C., & Chen, X. Y. (2010) · Progress in Quantum Electronics · doi:10.1016/j.pquantelec.2010.04.001 · Cited by 1,078
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Instilling defect tolerance in new compounds
Walsh, A., & Zunger, A. (2017) · Nature Materials · doi:10.1038/nmat4973 · Cited by 299
Zafar, Z., Yi, S., Li, J., Li, C., Zhu, Y., Zada, A., Yao, W., Liu, Z., & Yue, X. (2022) · ENERGY & ENVIRONMENTAL MATERIALS · doi:10.1002/eem2.12171 · Cited by 284
Alkauskas, A., Lyons, J. L., Steiauf, D., & Van de Walle, C. G. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.267401 · Cited by 277
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Metadata
- Authors
- Lyons, J. L., Janotti, A., & Van de Walle, C. G.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2009-12-21
- Volume
- 95
- Issue
- 25
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2054568307
- Cited by
- 395
- References
- 18
- FWCI
- 20.90
- Type
- journal article
- Language
- en
- Open access
- closed
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