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Contact resistance in few and multilayer graphene devices
Abstract
The contact resistance of metals on backgated graphene field-effect transistors is studied. The residual resistance obtained at high backgate voltage is found to be in excellent agreement with the extracted values of contact resistance from transfer length measurements on graphene flakes. The contact resistance is found to be a significant contributor to the total resistance of graphene-based devices. The specific contact resistance is shown to be independent of the applied backgate voltage and the number of graphene layers.
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Cited by
Electronics based on two-dimensional materials
Fiori, G., Bonaccorso, F., Iannaccone, G., Palacios, T., Neumaier, D., Seabaugh, A., Banerjee, S. K., & Colombo, L. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.207 · Cited by 3,176
Self-citationThe origins and limits of metal–graphene junction resistance
Xia, F., Perebeinos, V., Lin, Y.-M., Wu, Y., & Avouris, P. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2011.6 · Cited by 832
Shi, G., Zhao, Z., Pai, J., Lee, I., Zhang, L., Stevenson, C., Ishara, K., Zhang, R., Zhu, H., & Ma, J. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201602619 · Cited by 399
Robinson, J. A., LaBella, M., Zhu, M., Hollander, M., Kasarda, R., Hughes, Z., Trumbull, K., Cavalero, R., & Snyder, D. (2011) · Applied Physics Letters · doi:10.1063/1.3549183 · Cited by 308
The role of contact resistance in graphene field-effect devices
Giubileo, F., & Di Bartolomeo, A. (2017) · Progress in Surface Science · doi:10.1016/j.progsurf.2017.05.002 · Cited by 257
Metadata
- Authors
- Venugopal, A., Colombo, L., & Vogel, E. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2010-01-04
- Volume
- 96
- Issue
- 1
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2040726943
- Cited by
- 281
- References
- 0
- FWCI
- 17.45
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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