The DOI matches its Crossref record; 17 of the 17 references it cites were found in a registry or an index.
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
Open accessAbstract
We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov–Shur plasma wave instability in the gated two-dimensional electron gas.
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“High temperatures increase the mobility of metal ions [34].”
From Adsorption of toxic metals from greywater using coconut husk biochar and spent green tea (2024) · cites this paper as [34]
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Dyakonov, M. I., & Shur, M. S. (1993) · Physical Review Letters · doi:10.1103/physrevlett.71.2465 · Cited by 1,188
30-W/mm GaN HEMTs by Field Plate Optimization
Wu, Y., Saxler, A., Moore, M., Smith, R. P., Sheppard, S. T., Chavarkar, P., Wisleder, T., Mishra, U. K., & Parikh, P. (2004) · IEEE Electron Device Letters · doi:10.1109/led.2003.822667 · Cited by 1,101
Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
Knap, W., Lusakowski, J., Parenty, T., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1689401 · Cited by 354
Self-citationFar infrared emission from plasma oscillations of Si inversion layers
Tsui, D. C., Gornik, E., & Logan, R. A. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)91043-1 · Cited by 201
Room-temperature terahertz emission from nanometer field-effect transistors
Dyakonova, N., Fatimy, A. E., Lusakowskil, J., et al. (2006) · Applied Physics Letters · doi:10.1063/1.2191421 · Cited by 140
Self-citationTerahertz detection by GaN/AlGaN transistors
Fatimy, A. E., Tombet, S. B., Teppe, F., et al. (2006) · Electronics Letters · doi:10.1049/el:20062452 · Cited by 109
Hirakawa, K., Yamanaka, K., Grayson, M., et al. (1995) · Applied Physics Letters · doi:10.1063/1.114333 · Cited by 91
Dyakonova, N., Teppe, F., Łusakowski, J., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.1921339 · Cited by 84
Self-citationThermal Excitation of Two-Dimensional Plasma Oscillations
Höpfel, R. A., Vass, E., & Gornik, E. (1982) · Physical Review Letters · doi:10.1103/physrevlett.49.1667 · Cited by 79
Room temperature terahertz emission from grating coupled two-dimensional plasmons
Meziani, Y. M., Handa, H., Knap, W., et al. (2008) · Applied Physics Letters · doi:10.1063/1.2919097 · Cited by 75
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Research works printed but not linked: 1
- 1996, IEEE Trans. Electron Devices, 43, 1
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Adsorption of toxic metals from greywater using coconut husk biochar and spent green tea
Duwiejuah, A. B., Adjei, E. F., & Alhassan, E. H. (2024) · Heliyon · doi:10.1016/j.heliyon.2024.e38189 · Cited by 19
Metadata
- Authors
- El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., Delage, S., Prystawko, P., & Skierbiszewski, C.
- Affiliations
- Tohoku University 1 RIEC, , 211 Katahira, Aobaku, Sendai 9808577, Japan
- Centre National de la Recherche Scientifique (FR)
- Universidad de Salamanca (ES)
- Tohoku University (JP)
- Institut d’Electronique et de Microélectronique du Nord 5 , UMR CNRS 8520, Villeneuve d’Acsq, France
- Thales (France) (FR)
- Institute of High Pressure Physics (PL)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2010-01-15
- Volume
- 107
- Issue
- 2
- Pages
- 024504
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2010273162
- Cited by
- 160
- References
- 17
- Citations by year
- 2026: 4 · 2025: 5 · 2024: 7 · 2023: 4 · 2022: 8 · 2021: 8 · 2020: 6 · 2019: 13 · 2018: 9 · 2017: 9 · 2016: 12 · 2015: 11 · 2014: 10 · 2013: 15 · 2012: 11
- FWCI
- 13.62
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- other-oa
- Locations
- Journal of Applied Physics (publishedVersion, other-oa)
- HAL (submittedVersion, other-oa)
- Institutional Repositories DataBase (IRDB) (submittedVersion, cc-by-nc-nd)
- Funders
- Agence Nationale de la Recherche
- Ministerio de Ciencia e Innovación (TEC2008-02281)
- Université de Montpellier
- Japan Society for the Promotion of Science
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Gyrotron and Vacuum Electronics Research
- Keywords
- AlGaN/GaN HEMT, terahertz generation, gate voltage tuning, plasma wave instability, two-dimensional electron gas, plasma modes
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- CoChat. (2026). Citation check: AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources. https://app.cochat.ai/papers/10.1063/1.3291101
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- El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., Delage, S., Prystawko, P., & Skierbiszewski, C. (2010). AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources. Journal of Applied Physics. https://doi.org/10.1063/1.3291101
