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A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys
Abstract
A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si0.8Ge0.2 at 1300 K is estimated at ZT≂1.13 with an optimum carrier concentration of n≂2.9×1020 cm−3.
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Cited by
Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys
Joshi, G., Lee, H., Lan, Y., Wang, X., Zhu, G., Wang, D., Gould, R. W., Cuff, D. C., Tang, M. Y., Dresselhaus, M. S., et al. (2008) · Nano Letters · doi:10.1021/nl8026795 · Cited by 1,119
Cheaito, R., Duda, J. C., Beechem, T. E., Hattar, K., Ihlefeld, J. F., Medlin, D. L., Rodriguez, M. A., Campion, M. J., Piekos, E. S., & Hopkins, P. E. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.195901 · Cited by 175
Metadata
- Authors
- Vining, C. B.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1991-01-01
- Volume
- 69
- Issue
- 1
- Pages
- 331-341
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2013521266
- Cited by
- 323
- References
- 0
- FWCI
- 3.76
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys. https://app.cochat.ai/papers/10.1063/1.347717
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- Vining, C. B. (1991). A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys. Journal of Applied Physics. https://doi.org/10.1063/1.347717
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