The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Porous silicon formation mechanisms
Abstract
Recent reports describing photoluminescence in porous silicon have heightened the level of interest in it as a unique electronic material, and have created a need for a more complete understanding of the mechanism of porous silicon formation. The various models describing porous silicon formation are reviewed and the known electrochemical and morphological properties are discussed with the intention of unifying the different models into a comprehensive explanation for the formation of a porous structure in silicon. Because the specific surface dissolution chemistry is critical for a complete understanding of pore formation, some of the more prominent dissolution reactions are also reviewed and their relative importance to pore generation and morphology is discussed. Some aspects of the recently reported quantum effects are also reviewed. Because the mechanism of porous silicon formation involves a wide range of interdisciplinary fields, a considerable number of analogies and examples to related phenomena are also presented throughout the review to aid comprehension.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
(1999) · Choice Reviews Online · doi:10.5860/choice.37-0940 · Cited by 14,314
Cited by
Janshoff, A., Dancil, K.-P. S., Steinem, C., Greiner, D. P., Lin, V. S.-Y., Gurtner, C., Motesharei, K., Sailor, M. J., & Ghadiri, M. R. (1998) · Journal of the American Chemical Society · doi:10.1021/ja9826237 · Cited by 386
Metadata
- Authors
- Smith, R. L., & Collins, S. D.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1992-04-15
- Volume
- 71
- Issue
- 8
- Pages
- R1-R22
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2055298388
- Cited by
- 1,205
- References
- 1
- FWCI
- 45.89
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Porous silicon formation mechanisms. https://app.cochat.ai/papers/10.1063/1.350839
- The paper
- Smith, R. L., & Collins, S. D. (1992). Porous silicon formation mechanisms. Journal of Applied Physics. https://doi.org/10.1063/1.350839
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.