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Semiconductor ultraviolet detectors

Razeghi, M., Rogalski, A.·1996·Journal of Applied Physics

Abstract

In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail.

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Metadata

Authors
Razeghi, M., & Rogalski, A.
Venue
Journal of Applied Physics
Published
1996-05-15
Volume
79
Issue
10
Pages
7433-7473
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W1982112708
Cited by
1,477
References
0
FWCI
17.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Semiconductor ultraviolet detectors. https://app.cochat.ai/papers/10.1063/1.362677
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Razeghi, M., & Rogalski, A. (1996). Semiconductor ultraviolet detectors. Journal of Applied Physics. https://doi.org/10.1063/1.362677

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