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Mechanical cleaning of graphene
Open accessAbstract
Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of ∼36 000 cm2/Vs at low temperature.
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Citations
Cited by
Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride
Jo, I., Pettes, M. T., Kim, J., Watanabe, K., Taniguchi, T., Yao, Z., & Shi, L. (2013) · Nano Letters · doi:10.1021/nl304060g · Cited by 770
Self-citationStrong interface-induced spin–orbit interaction in graphene on WS2
Wang, Z., Ki, D., Chen, H., Berger, H., MacDonald, A. H., & Morpurgo, A. F. (2015) · Nature Communications · doi:10.1038/ncomms9339 · Cited by 444
Zomer, P. J., Guimarães, M. H. D., Brant, J. C., Tombros, N., & van Wees, B. J. (2014) · Applied Physics Letters · doi:10.1063/1.4886096 · Cited by 408
Metadata
- Authors
- Goossens, A. M., Calado, V. E., Barreiro, A., Watanabe, K., Taniguchi, T., & Vandersypen, L. M. K.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2012-02-13
- Volume
- 100
- Issue
- 7
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1497079952
- Cited by
- 194
- References
- 0
- FWCI
- 7.38
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Goossens, A. M., Calado, V. E., Barreiro, A., Watanabe, K., Taniguchi, T., & Vandersypen, L. M. K. (2012). Mechanical cleaning of graphene. Applied Physics Letters. https://doi.org/10.1063/1.3685504
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