The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Abstract
Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2 field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.
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Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
High-field electrical transport in single-wall carbon nanotubes
Yao, Z., Kane, C. L., & Dekker, C. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.2941 · Cited by 1,501
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Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Tongay, S., Zhou, J., Ataca, C., Liu, J., Kang, J. S., Matthews, T. S., You, L., Li, J., Grossman, J. C., & Wu, J. (2013) · Nano Letters · doi:10.1021/nl4011172 · Cited by 788
Self-citationAdsorption of gas molecules on monolayer MoS2 and effect of applied electric field
Yue, Q., Shao, Z., Chang, S., & Li, J. (2013) · Nanoscale Research Letters · doi:10.1186/1556-276x-8-425 · Cited by 734
Self-citationSchmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
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Metadata
- Authors
- Qiu, H., Pan, L., Yao, Z., Li, J., Shi, Y., & Wang, X.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2012-03-19
- Volume
- 100
- Issue
- 12
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2011189565
- Cited by
- 586
- References
- 3
- FWCI
- 25.77
- Type
- journal article
- Language
- en
- Open access
- closed
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- Qiu, H., Pan, L., Yao, Z., Li, J., Shi, Y., & Wang, X. (2012). Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Applied Physics Letters. https://doi.org/10.1063/1.3696045
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