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Cited by 79Advanced Memory and Neural ComputingZnO doping and propertiesSemiconductor materials and devices

The DOI matches its Crossref record; its reference list is not available.

ZnO-based one diode-one resistor device structure for crossbar memory applications

Liu, Zi-Jheng, Gan, Jon-Yiew, Yew, Tri-Rung·2012·Applied Physics Letters
DOI 10.1063/1.3701722
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Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Zi-Jheng Liu, Jon-Yiew Gan, Tri-Rung Yew; ZnO-based one diode-one resistor device structure for crossbar memory applications. Appl. Phys. Lett. 9 April 2012; 100 (15): 153503. https://doi.org/10.1063/1.3701722 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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References 18 · Cited by 79

Research works printed but not linked: 19

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Metadata

Authors
Liu, Z.-J., Gan, J.-Y., & Yew, T.-R.
Affiliations
National Tsing Hua University (TW)
ORCID
Yew, Tri-Rung
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
2012-04-09
Volume
100
Issue
15
Pages
153503
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
DOI
10.1063/1.3701722
OpenAlex
W2017113842
Cited by
79
References
18
Citations by year
2026: 1 · 2025: 4 · 2024: 3 · 2023: 4 · 2022: 6 · 2021: 5 · 2020: 1 · 2019: 6 · 2018: 7 · 2017: 7 · 2016: 9 · 2015: 7 · 2014: 5 · 2013: 11 · 2012: 3
FWCI
5.32
Type
journal article
Language
en
Open access
closed
Locations
Applied Physics Letters (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Materials Science › Materials Chemistry › ZnO doping and properties
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
zinc oxide, crossbar memory, resistive switching

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CoChat. (2026). Citation check: ZnO-based one diode-one resistor device structure for crossbar memory applications. https://app.cochat.ai/papers/10.1063/1.3701722
The paper
Liu, Z.-J., Gan, J.-Y., & Yew, T.-R. (2012). ZnO-based one diode-one resistor device structure for crossbar memory applications. Applied Physics Letters. https://doi.org/10.1063/1.3701722