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Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thick films
Abstract
1.8 -μm-(Pb0.97La0.02)(Zr0.95−xSnxTi0.05)O3 antiferroelectric thick films with orthorhombic (x = 0.05 and 0.25) and tetragonal (x = 0.40) structure were deposited on platinum-buffered silicon substrates by using a chemical solution way. All the films had a uniform microstructure with pure perovskite phase. With increasing x value, dielectric constant and critical electric breakdown field of the thick films were gradually increased, while their saturated polarizations were decreased. As a result, their maximum recoverable energy-storage density was increased for the thick films with larger x values. A huge recoverable energy-storage density of 56 J/cm3 was obtained in antiferroelectric thick films with x = 0.40. Moreover, a good temperature-dependent stability of the energy storage was obtained in the all films from 20 to 120 °C.
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Cited by
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A comprehensive review on the progress of lead zirconate-based antiferroelectric materials
Hao, X., Zhai, J., Kong, L. B., & Xu, Z. (2014) · Progress in Materials Science · doi:10.1016/j.pmatsci.2014.01.002 · Cited by 782
Self-citationHigh-entropy enhanced capacitive energy storage
Yang, B., Zhang, Y., Pan, H., Si, W., Zhang, Q., Shen, Z., Yu, Y., Lan, S., Meng, F., Liu, Y., et al. (2022) · Nature Materials · doi:10.1038/s41563-022-01274-6 · Cited by 615
Pan, H., Ma, J., Ma, J., Zhang, Q., Liu, X., Guan, B., Gu, L., Zhang, X., Zhang, Y.-J., Li, L., et al. (2018) · Nature Communications · doi:10.1038/s41467-018-04189-6 · Cited by 578
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Zeng, Z., Xu, Y., Zhang, Z., Gao, Z., Luo, M., Yin, Z., Zhang, C., Xu, J., Huang, B., Luo, F., et al. (2020) · Chemical Society Reviews · doi:10.1039/c9cs00330d · Cited by 422
Metadata
- Authors
- Hao, X., Wang, Y., Zhang, L., Zhang, L., & An, S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-04-22
- Volume
- 102
- Issue
- 16
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2044006865
- Cited by
- 186
- References
- 0
- FWCI
- 7.55
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hao, X., Wang, Y., Zhang, L., Zhang, L., & An, S. (2013). Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thick films. Applied Physics Letters. https://doi.org/10.1063/1.4802794
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