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Cited by 235

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Optical switching at 1.55 μ m in silicon racetrack resonators using phase change materials

Open access
Rudé, Miquel, Pello, Josselin, Simpson, Robert E., Osmond, Johann, Roelkens, Gunther, van der Tol, Jos J. G. M., Pruneri, Valerio·2013·Applied Physics Letters

Abstract

An optical switch operating at a wavelength of 1.55 μm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical properties upon transitions between its crystalline and amorphous structural phases. These transitions are triggered using a pulsed laser diode at λ = 975 nm and used to tune the resonant frequency of the resonator and the resultant modulation depth of the 1.55 μm transmitted light.

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Metadata

Authors
Rudé, M., Pello, J., Simpson, R. E., Osmond, J., Roelkens, G., van der Tol, J. J. G. M., & Pruneri, V.
Venue
Applied Physics Letters
Published
2013-09-30
Volume
103
Issue
14
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1978446829
Cited by
235
References
3
FWCI
3.99
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Optical switching at 1.55 μ m in silicon racetrack resonators using phase change materials. https://app.cochat.ai/papers/10.1063/1.4824714
The paper
Rudé, M., Pello, J., Simpson, R. E., Osmond, J., Roelkens, G., van der Tol, J. J. G. M., & Pruneri, V. (2013). Optical switching at 1.55 μ m in silicon racetrack resonators using phase change materials. Applied Physics Letters. https://doi.org/10.1063/1.4824714

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