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Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2
Abstract
Monolayer Mo1−xWxSe2 (x = 0, 0.14, 0.75, and 1) alloys were experimentally realized from synthesized crystals. Mo1−xWxSe2 monolayers are direct bandgap semiconductors displaying high luminescence and are stable in ambient. The bandgap values can be tuned by varying the W composition. Interestingly, the bandgap values do not scale linearly with composition. Such non-linearity is attributed to localization of conduction band minimum states around Mo d orbitals, whereas the valence band maximum states are uniformly distributed among W and Mo d orbitals. Results introduce monolayer Mo1−xWxSe2 alloys with different gap values, and open a venue for broadening the materials library and applications of two-dimensional semiconductors.
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Cited by
Recent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Bandgap engineering of two-dimensional semiconductor materials
Chaves, A., Azadani, J. G., Alsalman, H., da Costa, D. R., Frisenda, R., Chaves, A. J., Song, S. H., Kim, Y. D., He, D., Zhou, J., et al. (2020) · npj 2D Materials and Applications · doi:10.1038/s41699-020-00162-4 · Cited by 1,296
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
Duan, X., Wang, C., Shaw, J. C., Cheng, R., Chen, Y., Li, H., Wu, X., Tang, Y., Zhang, Q., Pan, A., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.222 · Cited by 1,241
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
Huang, C., Wu, S., Sanchez, A. M., Peters, J. J. P., Beanland, R., Ross, J. S., Rivera, P., Yao, W., Cobden, D. H., & Xu, X. (2014) · Nature Materials · doi:10.1038/nmat4064 · Cited by 1,017
Electrical control of second-harmonic generation in a WSe2 monolayer transistor
Seyler, K. L., Schaibley, J. R., Gong, P., Rivera, P., Jones, A. M., Wu, S., Yan, J., Mandrus, D. G., Yao, W., & Xu, X. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.73 · Cited by 572
Metadata
- Authors
- Tongay, S., Narang, D. S., Kang, J., Fan, W., Ko, C., Luce, A. V., Wang, K. X., Suh, J., Patel, K. D., Pathak, V. M., Li, J., & Wu, J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-01-02
- Volume
- 104
- Issue
- 1
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2086047739
- Cited by
- 187
- References
- 0
- FWCI
- 9.38
- Type
- journal article
- Language
- en
- Open access
- closed
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- Tongay, S., Narang, D. S., Kang, J., Fan, W., Ko, C., Luce, A. V., Wang, K. X., Suh, J., Patel, K. D., Pathak, V. M., Li, J., & Wu, J. (2014). Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2. Applied Physics Letters. https://doi.org/10.1063/1.4834358
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