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p-type doping of MoS2 thin films using Nb
Abstract
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 3.1 × 1020 cm−3, Hall mobility of 8.5 cm2 V−1 s−1 was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS2 layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.
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Cited by
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Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Defect engineering of two-dimensional transition metal dichalcogenides
Lin, Z., Carvalho, B. R., Kahn, E., Lv, R., Rao, R., Terrones, H., Pimenta, M. A., & Terrones, M. (2016) · 2D Materials · doi:10.1088/2053-1583/3/2/022002 · Cited by 1,038
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Huo, N., & Konstantatos, G. (2018) · Advanced Materials · doi:10.1002/adma.201801164 · Cited by 730
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
Suh, J., Park, T.-E., Lin, D.-Y., Fu, D., Park, J., Jung, H. J., Chen, Y., Ko, C., Jang, C., Sun, Y., et al. (2014) · Nano Letters · doi:10.1021/nl503251h · Cited by 694
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Azcatl, A., Qin, X., Prakash, A., Zhang, C., Cheng, L., Wang, Q., Lu, N., Kim, M. J., Kim, J., Cho, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01853 · Cited by 491
Metadata
- Authors
- Laskar, M. R., Nath, D. N., Ma, L., Lee, E. W., Lee, C. H., Kent, T., Yang, Z., Mishra, R., Roldan, M. A., Idrobo, J.-C., Pantelides, S. T., Pennycook, S. J., Myers, R. C., Wu, Y., & Rajan, S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-03-03
- Volume
- 104
- Issue
- 9
- Pages
- 092104
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2071400351
- Cited by
- 319
- References
- 0
- FWCI
- 14.89
- Type
- journal article
- Language
- en
- Open access
- closed
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- Laskar, M. R., Nath, D. N., Ma, L., Lee, E. W., Lee, C. H., Kent, T., Yang, Z., Mishra, R., Roldan, M. A., Idrobo, J.-C., Pantelides, S. T., Pennycook, S. J., Myers, R. C., Wu, Y., & Rajan, S. (2014). p-type doping of MoS2 thin films using Nb. Applied Physics Letters. https://doi.org/10.1063/1.4867197
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