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Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Open access
Michl, Julia, Teraji, Tokuyuki, Zaiser, Sebastian, Jakobi, Ingmar, Waldherr, Gerald, Dolde, Florian, Neumann, Philipp, Doherty, Marcus W., Manson, Neil B., Isoya, Junichi, Wrachtrup, Jörg·2014·Applied Physics Letters

Abstract

Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% ± 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% ± 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.

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Metadata

Authors
Michl, J., Teraji, T., Zaiser, S., Jakobi, I., Waldherr, G., Dolde, F., Neumann, P., Doherty, M. W., Manson, N. B., Isoya, J., & Wrachtrup, J.
Venue
Applied Physics Letters
Published
2014-03-10
Volume
104
Issue
10
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1581200652
Cited by
200
References
2
FWCI
8.79
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces. https://app.cochat.ai/papers/10.1063/1.4868128
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Michl, J., Teraji, T., Zaiser, S., Jakobi, I., Waldherr, G., Dolde, F., Neumann, P., Doherty, M. W., Manson, N. B., Isoya, J., & Wrachtrup, J. (2014). Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces. Applied Physics Letters. https://doi.org/10.1063/1.4868128

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