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Cited by 385

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Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

Open access
Wickramaratne, Darshana, Zahid, Ferdows, Lake, Roger K.·2014·The Journal of Chemical Physics

Abstract

The electronic and thermoelectric properties of one to four monolayers of MoS2, MoSe2, WS2, and WSe2 are calculated. For few layer thicknesses, the near degeneracies of the conduction band K and Σ valleys and the valence band Γ and K valleys enhance the n-type and p-type thermoelectric performance. The interlayer hybridization and energy level splitting determine how the number of modes within kBT of a valley minimum changes with layer thickness. In all cases, the maximum ZT coincides with the greatest near-degeneracy within kBT of the band edge that results in the sharpest turn-on of the density of modes. The thickness at which this maximum occurs is, in general, not a monolayer. The transition from few layers to bulk is discussed. Effective masses, energy gaps, power-factors, and ZT values are tabulated for all materials and layer thicknesses.

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Crossref · 10.1063/1.4869142

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Metadata

Authors
Wickramaratne, D., Zahid, F., & Lake, R. K.
Venue
The Journal of Chemical Physics
Published
2014-03-28
Volume
140
Issue
12
Pages
124710-124710
ISSN
  • 0021-9606 (ISSN-L)
  • 1089-7690
OpenAlex
W2053568924
Cited by
385
References
2
FWCI
14.89
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Electronic and thermoelectric properties of few-layer transition metal dichalcogenides. https://app.cochat.ai/papers/10.1063/1.4869142
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Wickramaratne, D., Zahid, F., & Lake, R. K. (2014). Electronic and thermoelectric properties of few-layer transition metal dichalcogenides. The Journal of Chemical Physics. https://doi.org/10.1063/1.4869142

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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