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Cited by 114Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesMultiferroics and related materials

Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

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Ge, Jun, Remiens, Denis, Dong, Xianlin, Chen, Ying, Costecalde, Jean, Gao, Feng, Cao, Fei, Wang, Genshui·2014·Applied Physics Letters
DOI 10.1063/1.4896156
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Abstract

We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3 can be enhanced for the (110) or (111) SrTiO3 substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ∼120 kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3 J/cm3 at 700 kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.

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Authors
Ge, J., Remiens, D., Dong, X., Chen, Y., Costecalde, J., Gao, F., Cao, F., & Wang, G.
Affiliations
  • Centre National de la Recherche Scientifique (FR)
  • Université de Valenciennes et du Hainaut Cambrésis, 2 IEMN-DOAE-MIMM, CNRS UMR 8520, 59313 Valenciennes Cedex 9, Cité scientifique, France and 59655 Villeneuve-d'Ascq Cedex, France
  • Chinese Academy of Sciences (CN)
ORCID
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
2014-09-15
Volume
105
Issue
11
Pages
112908
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
DOI
10.1063/1.4896156
OpenAlex
W2073322003
Cited by
114
References
0
Citations by year
2026: 1 · 2025: 6 · 2024: 16 · 2023: 10 · 2022: 9 · 2021: 18 · 2020: 9 · 2019: 11 · 2018: 5 · 2017: 9 · 2016: 13 · 2015: 6 · 2014: 1
FWCI
4.39
Type
journal article
Language
en
Open access
Locations
  • Applied Physics Letters (publishedVersion)
  • HAL (submittedVersion, other-oa)
Funders
international partnership project of Chinese Academy of Scienc (2012CB619406, KFKT20120001, 13520700700)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
PbZrO3, energy storage density, strain engineering, substrate orientation, SrTiO3 substrate, ferroelectric-antiferroelectric transition, polarization, mechanical confinement, volume expansion, epitaxial thin films

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