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Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
Open accessAbstract
The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/Hz making our graphene sensors highly interesting for industrial applications.
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Cited by
The hot pick-up technique for batch assembly of van der Waals heterostructures
Pizzocchero, F., Gammelgaard, L., Jessen, B. S., Caridad, J. M., Wang, L., Hone, J., Bøggild, P., & Booth, T. J. (2016) · Nature Communications · doi:10.1038/ncomms11894 · Cited by 709
Magnetic sensors-A review and recent technologies
Khan, M. A., Sun, J., Li, B., Przybysz, A., & Kosel, J. (2021) · Engineering Research Express · doi:10.1088/2631-8695/ac0838 · Cited by 315
Metadata
- Authors
- Dauber, J., Sagade, A. A., Oellers, M., Watanabe, K., Taniguchi, T., Neumaier, D., & Stampfer, C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2015-05-11
- Volume
- 106
- Issue
- 19
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1717784222
- Cited by
- 171
- References
- 0
- FWCI
- 10.91
- Type
- journal article
- Language
- en
- Open access
- green
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- Dauber, J., Sagade, A. A., Oellers, M., Watanabe, K., Taniguchi, T., Neumaier, D., & Stampfer, C. (2015). Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride. Applied Physics Letters. https://doi.org/10.1063/1.4919897
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