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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Open accessAbstract
In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
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Cites
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Chang, T., Jo, S.-H., & Lu, W. (2011) · ACS Nano · doi:10.1021/nn202983n · Cited by 1,058
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Lee, M., Lee, W., Choi, S., Jo, J., Kim, J., Park, S. K., & Kim, Y. (2017) · Advanced Materials · doi:10.1002/adma.201700951 · Cited by 567
Wang, M., Luo, Y., Wang, T., Wan, C., Pan, L., Pan, S., He, K., Neo, A., & Chen, X. (2021) · Advanced Materials · doi:10.1002/adma.202003014 · Cited by 451
Optoelectronic Synaptic Devices for Neuromorphic Computing
Wang, Y., Yin, L., Huang, W., Li, Y., Huang, S., Zhu, Y., Yang, D., & Pi, X. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000099 · Cited by 403
Neuro-inspired electronic skin for robots
Liu, F., Deswal, S., Christou, A., Sandamirskaya, Y., Kaboli, M., & Dahiya, R. (2022) · Science Robotics · doi:10.1126/scirobotics.abl7344 · Cited by 300
Metadata
- Authors
- Li, H. K., Chen, T. P., Liu, P., Hu, S. G., Liu, Y., Zhang, Q., & Lee, P. S.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2016-06-28
- Volume
- 119
- Issue
- 24
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2470200201
- Cited by
- 215
- References
- 2
- FWCI
- 6.25
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Li, H. K., Chen, T. P., Liu, P., Hu, S. G., Liu, Y., Zhang, Q., & Lee, P. S. (2016). A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure. Journal of Applied Physics. https://doi.org/10.1063/1.4955042
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