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Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Guo, Yu, Zhou, Si, Bai, Yizhen, Zhao, Jijun·2017·Applied Physics Letters

Abstract

Piezoelectricity is a unique material property that converts mechanical energy into electricity or vice versa. Starting from the group-III monochalcogenide monolayers, we design a series of derivative Janus structures for piezoelectric materials, including Ga2SSe, Ga2STe, Ga2SeTe, In2SSe, In2STe, In2SeTe, GaInS2, GaInSe2, and GaInTe2. Our first-principles calculations show that these Janus structures are thermodynamically and dynamically stable. They have a bandgap in the range of 0.89–2.03 eV, lower than those of the perfect monolayers, and Ga2STe, Ga2SeTe, In2STe, and In2SeTe monolayers are direct gap semiconductors. They possess piezoelectric coefficients up to 8.47 pm/V, over four times the maximum value obtained in perfect group-III monochalcogenide monolayers. Moreover, the broken mirror symmetry of these Janus structures induces out-of-plane dipolar polarization, yielding additional out-of-plane piezoelectric coefficients of 0.07–0.46 pm/V. The enhanced piezoelectric properties enable the development of these novel two-dimensional materials for piezoelectric sensors and nanogenerators.

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Metadata

Authors
Guo, Y., Zhou, S., Bai, Y., & Zhao, J.
Venue
Applied Physics Letters
Published
2017-04-17
Volume
110
Issue
16
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2605650997
Cited by
440
References
3
FWCI
12.42
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers. https://app.cochat.ai/papers/10.1063/1.4981877
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Guo, Y., Zhou, S., Bai, Y., & Zhao, J. (2017). Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers. Applied Physics Letters. https://doi.org/10.1063/1.4981877

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