The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN
Abstract
Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 Å. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.
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A fast and robust algorithm for Bader decomposition of charge density
Henkelman, G., Arnaldsson, A., & Jónsson, H. (2006) · Computational Materials Science · doi:10.1016/j.commatsci.2005.04.010 · Cited by 10,723
Cited by
Wang, S., Ren, C., Tian, H., Yu, J., & Sun, M. (2018) · Physical Chemistry Chemical Physics · doi:10.1039/c8cp00808f · Cited by 423
Self-citationWang, S., Tian, H., Ren, C., Yu, J., & Sun, M. (2018) · Scientific Reports · doi:10.1038/s41598-018-30614-3 · Cited by 282
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Metadata
- Authors
- Sun, M., Chou, J.-P., Ren, Q., Zhao, Y., Yu, J., & Tang, W.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2017-04-24
- Volume
- 110
- Issue
- 17
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2609721566
- Cited by
- 197
- References
- 1
- FWCI
- 11.40
- Type
- journal article
- Language
- en
- Open access
- closed
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- Sun, M., Chou, J.-P., Ren, Q., Zhao, Y., Yu, J., & Tang, W. (2017). Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN. Applied Physics Letters. https://doi.org/10.1063/1.4982690
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