Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Abstract
Applications for integrated energy storage and pulse-power devices may have found opportunities in the emergence of the ferroelectric hafnium-zirconium oxide thin film system. To explore the boundaries of this material thin film system, 10 nm thick binary Hf0.5Zr0.5O2 (HZO) thin films are doped with Al or Si (Al or Si-doped HZO). The added dopants provide a distinct shift in behavior from ferroelectric to antiferroelectric characteristics. Si-doped Hf0.5Zr0.5O2 thin films exhibited a larger than 50 J/cm3 energy storage density with an efficiency of over 80%. The Si-doped Hf0.5Zr0.5O2 thin films were cycled 109 times up to 125 °C and maintained a robust 35 J/cm3 energy storage density and greater than 80% efficiency. Al-doped Hf0.5Zr0.5O2 thin films exhibited a larger switching field, leading to a smaller energy storage density and less robust cycling properties than Si-doped Hf0.5Zr0.5O2.
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AFE-like Al:HfO2 changes to the FE phase after 10^5 cycles, while Si:(Hf,Zr)O2 maintains the AFE-like phase past 10^9 cycles.
“AFE-like Al:HfO 2 change to the FE phase after 10 5 cycles, 31 while Si:(Hf,Zr)O 2 maintains the AFE-like phase past 10 9 cycles, 15 which is in agreement with observations of related antiferroelectrics.32”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [15]
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Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Si, Y., Zhang, T., Liu, C., Das, S., Xu, B., Burkovsky, R. G., Wei, X.-K., & Chen, Z. (2024) · Progress in Materials Science · doi:10.1016/j.pmatsci.2023.101231 · Cited by 84 · see citing works
The other model antiferroelectric: PbHfO3 thin films from ALD precursors
Hanrahan, B., Milesi-Brault, C., Leff, A., Payne, A., Liu, S., Guennou, M., & Strnad, N. (2021) · APL Materials · doi:10.1063/5.0035730 · Cited by 19 · see citing works
- Authors
- Lomenzo, P. D., Chung, C.-C., Zhou, C., Jones, J. L., & Nishida, T.
- Affiliations
- North Carolina State University (US)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2017-06-05
- Volume
- 110
- Issue
- 23
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2621540248
- Cited by
- 117
- References
- 0
- Citations by year
- 2026: 9 · 2025: 7 · 2024: 11 · 2023: 16 · 2022: 20 · 2021: 14 · 2020: 14 · 2019: 11 · 2018: 11 · 2017: 4
- FWCI
- 4.55
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Funders
- National Science Foundation (ECCS-1542015, IIP-1439644)
- Army Research Office (W911NF-15-1-0593)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- Hf0.5Zr0.5O2, hafnium zirconium oxide, ferroelectric thin films, antiferroelectricity, aluminum doping, silicon doping, supercapacitors, energy storage density, cycling stability, switching field, integrated energy storage
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