Cited by 68Terahertz technology and applicationsAdvanced Semiconductor Detectors and MaterialsSuperconducting and THz Device Technology

Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs

Kohlhaas, R. B., Breuer, S., Nellen, S., Liebermeister, L., Schell, M., Semtsiv, M. P., Masselink, W. T., Globisch, B.·2019·Applied Physics Letters

Abstract

Rhodium (Rh)-doped In0.53Ga0.47As grown by gas-source molecular beam epitaxy is investigated as a terahertz (THz) detector antenna for optical excitation at 1550 nm. The 4d transition metal rhodium acts as a deep level and ultrafast trapping center. At a doping concentration around 8 × 1019 cm−3, InGaAs:Rh exhibits ideal properties for application as a THz antenna: an ultrashort carrier lifetime below 200 fs in combination with a mobility of 1010 cm2/Vs. The THz detectors fabricated from this sample show a record peak dynamic range of 105 dB and a bandwidth of up to 6.5 THz.

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Crossref · 10.1063/1.5095714

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  • SLAPCOPS and ECOPS systems utilizing resonator-internal repetition-rate modulation can achieve scan rates up to 1600 terahertz pulse traces per second.

    “These delay-line-free systems can achieve scan rates up to 1600 terahertz pulse traces per second [11]”
  • Terahertz time-domain spectroscopy systems based on resonator-internal repetition-rate modulation, such as SLAPCOPS and ECOPS, rely on electronic phase detectors that typically exhibit non-negligible random and systematic timing error.

    “Terahertz time-domain spectroscopy systems based on resonator-internal repetition-rate modulation, such as SLAPCOPS [12] and ECOPS [11], rely on electronic phase detectors which are typically prone to exhibit both a non-negligible random and systematic timing error.”

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References 24 · Cited by 68

Authors
Kohlhaas, R. B., Breuer, S., Nellen, S., Liebermeister, L., Schell, M., Semtsiv, M. P., Masselink, W. T., & Globisch, B.
Affiliations
  • Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute (DE)
  • Humboldt-Universität zu Berlin (DE)
Venue
Applied Physics Letters
Published
2019-06-03
Volume
114
Issue
22
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2948795732
Cited by
68
References
24
Citations by year
2026: 6 · 2025: 7 · 2024: 9 · 2023: 9 · 2022: 8 · 2021: 15 · 2020: 9 · 2019: 5
FWCI
3.33
Type
journal article
Language
en
Open access
closed
Locations
  • Applied Physics Letters (publishedVersion)
  • Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) (submittedVersion)
  • Fraunhofer-Publica (Fraunhofer-Gesellschaft) (submittedVersion)
Funders
Deutsche Forschungsgemeinschaft (2533/2-1)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
  • Physical Sciences › Physics and Astronomy › Astronomy and Astrophysics › Superconducting and THz Device Technology
Keywords
terahertz detectors, photoconductive detectors, rhodium doping, InGaAs, deep levels, charge trapping, carrier lifetime, carrier mobility, dynamic range, terahertz antennas, photoexcitation, 1550 nm

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