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Electrical switching and memory phenomena in Cu-TCNQ thin films
Abstract
Stable and reproducible current-controlled bistable electrical switching has been observed in polycrystalline organic semiconducting films. The effect has been observed in a lamellar structure with a film of microcrystalline Cu-TCNQ between Cu and Al electrodes where the Cu-TCNQ is grown on a Cu substrate via a spontaneous electrolysis technique. The switching effect is insensitive to moisture and is observed over a large temperature range. The current-voltage characteristics reveal an abrupt decrease in impedance from 2 MΩ to less than 200 Ω at a field strength of 4×103 V/cm. The transition from a high- to low-impedance state occurs with delay and switching times of approximately 15 and 10 nsec, respectively. Switching with high-power dissipation yields a low-impedance memory state which can be erased by application of a short current pulse. An interpretation of this behavior is based on the bulk properties of the mixed valence semiconductor Cu-TCNQ.
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Citations
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Solid-state memcapacitive system with negative and diverging capacitance
Martinez-Rincon, J., Di Ventra, M., & Pershin, Y. V. (2010) · Physical Review B · doi:10.1103/physrevb.81.195430 · Cited by 99
Metadata
- Authors
- Potember, R. S., Poehler, T. O., & Cowan, D. O.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1979-03-15
- Volume
- 34
- Issue
- 6
- Pages
- 405-407
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2025452585
- Cited by
- 474
- References
- 0
- FWCI
- 3.97
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Electrical switching and memory phenomena in Cu-TCNQ thin films. https://app.cochat.ai/papers/10.1063/1.90814
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- Potember, R. S., Poehler, T. O., & Cowan, D. O. (1979). Electrical switching and memory phenomena in Cu-TCNQ thin films. Applied Physics Letters. https://doi.org/10.1063/1.90814
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