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Multidimensional quantum well laser and temperature dependence of its threshold current

Arakawa, Y., Sakaki, H.·1982·Applied Physics Letters

Abstract

A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D-QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.

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Metadata

Authors
Arakawa, Y., & Sakaki, H.
Venue
Applied Physics Letters
Published
1982-06-01
Volume
40
Issue
11
Pages
939-941
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2068317040
Cited by
3,353
References
0
FWCI
7.05
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Multidimensional quantum well laser and temperature dependence of its threshold current. https://app.cochat.ai/papers/10.1063/1.92959
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Arakawa, Y., & Sakaki, H. (1982). Multidimensional quantum well laser and temperature dependence of its threshold current. Applied Physics Letters. https://doi.org/10.1063/1.92959

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