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Multidimensional quantum well laser and temperature dependence of its threshold current
Abstract
A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D-QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.
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Citations
Cited by
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Intrinsic mechanism for the poor luminescence properties of quantum-box systems
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
Chen, S., Li, W., Wu, J., Jiang, Q., Tang, M., Shutts, S., Elliott, S. N., Sobiesierski, A., Seeds, A. J., Ross, I., et al. (2016) · Nature Photonics · doi:10.1038/nphoton.2016.21 · Cited by 877
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Perspective: The future of quantum dot photonic integrated circuits
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Metadata
- Authors
- Arakawa, Y., & Sakaki, H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1982-06-01
- Volume
- 40
- Issue
- 11
- Pages
- 939-941
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2068317040
- Cited by
- 3,353
- References
- 0
- FWCI
- 7.05
- Type
- journal article
- Language
- en
- Open access
- closed
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- Arakawa, Y., & Sakaki, H. (1982). Multidimensional quantum well laser and temperature dependence of its threshold current. Applied Physics Letters. https://doi.org/10.1063/1.92959
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