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1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy
Abstract
The feasibility of producing erbium-doped silicon light-emitting diodes by molecular beam epitaxy is demonstrated. The p-n junctions are formed by growing an erbium-doped p-type epitaxial silicon layer on an n-type silicon substrate. When the diodes are biased in the forward direction at 77 K they show an intense sharply structured electroluminescence spectrum at 1.54 μm. This luminescence is assigned to the internal 4f–4f transition 4I13/2→4I15/2 of Er3+ (4f11).
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Citations
Cited by
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon
Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.-H., Poate, J. M., & Kimerling, L. C. (1991) · Journal of Applied Physics · doi:10.1063/1.349382 · Cited by 417
Silicon as an emissive optical medium
Shainline, J. M., & Xu, J. (2007) · Laser & Photonics Reviews · doi:10.1002/lpor.200710021 · Cited by 52
Metadata
- Authors
- Ennen, H., Pomrenke, G., Axmann, A., Eisele, K., Haydl, W., & Schneider, J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1985-02-15
- Volume
- 46
- Issue
- 4
- Pages
- 381-383
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1977788464
- Cited by
- 349
- References
- 0
- FWCI
- 9.16
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. https://app.cochat.ai/papers/10.1063/1.95639
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- Ennen, H., Pomrenke, G., Axmann, A., Eisele, K., Haydl, W., & Schneider, J. (1985). 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. Applied Physics Letters. https://doi.org/10.1063/1.95639
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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