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Electron states in narrow gate-induced channels in Si
Abstract
Self-consistent numerical solutions of the Poisson and Schrödinger equations have been obtained for the states of electrons under a narrow gate or under a narrow slit in a metal-oxide-silicon structure with an inner and an outer gate. For the cases considered (30-nm-wide gate and 80-nm-wide slit), the states of motion parallel to the Si-SiO2 interface are more closely spaced than the states for motion perpendicular to the interface. It should be possible, for the structures considered, to achieve a dynamically one-dimensional system with an electron density ≲106 cm−1.
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Citations
Cited by
Absence of backscattering in the quantum Hall effect in multiprobe conductors
Büttiker, M. (1988) · Physical Review B · doi:10.1103/physrevb.38.9375 · Cited by 1,555
Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs Heterojunction
Berggren, K. F., Thornton, T. J., Newson, D. J., & Pepper, M. (1986) · Physical Review Letters · doi:10.1103/physrevlett.57.1769 · Cited by 363
Conductance Oscillations Periodic in the Density of a One-Dimensional Electron Gas
Scott-Thomas, J. H. F., Field, S. B., Kastner, M. A., Smith, H. I., & Antoniadis, D. A. (1989) · Physical Review Letters · doi:10.1103/physrevlett.62.583 · Cited by 353
Metadata
- Authors
- Laux, S. E., & Stern, F.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1986-07-14
- Volume
- 49
- Issue
- 2
- Pages
- 91-93
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2088963583
- Cited by
- 231
- References
- 0
- FWCI
- 28.17
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Electron states in narrow gate-induced channels in Si. https://app.cochat.ai/papers/10.1063/1.97361
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- Laux, S. E., & Stern, F. (1986). Electron states in narrow gate-induced channels in Si. Applied Physics Letters. https://doi.org/10.1063/1.97361
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