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Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors
Open accessAbstract
We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2- b ]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10 15 cm −2 ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 10 6 A/cm 2 , and high metallic conductivities, 10 4 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10 7 A/cm 2 . Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm 2 ·V −1 ·s −1 at 297 K, comparable with that found in fully crystalline organic devices.
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Cited by
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Kim, S. H., Hong, K., Xie, W., Lee, K. H., Zhang, S., Lodge, T. P., & Frisbie, C. D. (2013) · Advanced Materials · doi:10.1002/adma.201202790 · Cited by 957
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Kim, G., Kang, S.-J., Dutta, G. K., Han, Y.-K., Shin, T. J., Noh, Y.-Y., & Yang, C. (2014) · Journal of the American Chemical Society · doi:10.1021/ja504537v · Cited by 607
Metadata
- Authors
- Dhoot, A. S., Yuen, J. D., Heeney, M., McCulloch, I., Moses, D., & Heeger, A. J.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2006-08-08
- Volume
- 103
- Issue
- 32
- Pages
- 11834-11837
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W1999755520
- Cited by
- 178
- References
- 0
- FWCI
- 14.84
- Type
- journal article
- Language
- en
- Open access
- green
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- Dhoot, A. S., Yuen, J. D., Heeney, M., McCulloch, I., Moses, D., & Heeger, A. J. (2006). Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors. Proceedings of the National Academy of Sciences. https://doi.org/10.1073/pnas.0605033103
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