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Cited by 1,350

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p -Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

Open access
Irwin, Michael D., Buchholz, D. Bruce, Hains, Alexander W., Chang, Robert P. H., Marks, Tobin J.·2008·Proceedings of the National Academy of Sciences

Abstract

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p -type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C 61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage ( V oc ) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

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Metadata

Authors
Irwin, M. D., Buchholz, D. B., Hains, A. W., Chang, R. P. H., & Marks, T. J.
Venue
Proceedings of the National Academy of Sciences
Published
2008-02-26
Volume
105
Issue
8
Pages
2783-2787
ISSN
  • 0027-8424 (ISSN-L)
  • 1091-6490
OpenAlex
W4247918551
Cited by
1,350
References
1
FWCI
83.68
Type
journal article
Language
en
Open access
green

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Irwin, M. D., Buchholz, D. B., Hains, A. W., Chang, R. P. H., & Marks, T. J. (2008). p -Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells. Proceedings of the National Academy of Sciences. https://doi.org/10.1073/pnas.0711990105

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