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High thermoelectric performance by resonant dopant indium in nanostructured SnTe
Open accessAbstract
From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit ( ZT ) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.
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Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Enhanced thermoelectric performance of rough silicon nanowires
Hochbaum, A. I., Chen, R., Delgado, R. D., Liang, W., Garnett, E. C., Najarian, M., Majumdar, A., & Yang, P. (2008) · Nature · doi:10.1038/nature06381 · Cited by 4,109
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Rationally Designing High-Performance Bulk Thermoelectric Materials
Tan, G., Zhao, L.-D., & Kanatzidis, M. G. (2016) · Chemical Reviews · doi:10.1021/acs.chemrev.6b00255 · Cited by 2,355
Compromise and Synergy in High‐Efficiency Thermoelectric Materials
Zhu, T., Liu, Y., Fu, C., Heremans, J. P., Snyder, J. G., & Zhao, X. (2017) · Advanced Materials · doi:10.1002/adma.201605884 · Cited by 1,616
High Performance Thermoelectric Materials: Progress and Their Applications
Yang, L., Chen, Z., Dargusch, M. S., & Zou, J. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201701797 · Cited by 958
Tan, G., Zhao, L.-D., Shi, F., Doak, J. W., Lo, S.-H., Sun, H., Wolverton, C., Dravid, V. P., Uher, C., & Kanatzidis, M. G. (2014) · Journal of the American Chemical Society · doi:10.1021/ja500860m · Cited by 706
Mao, J., Liu, Z., Zhou, J., Zhu, H., Zhang, Q., Chen, G., & Ren, Z. (2018) · Advances in Physics · doi:10.1080/00018732.2018.1551715 · Cited by 592
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Metadata
- Authors
- Zhang, Q., Liao, B., Lan, Y., Lukas, K., Liu, W., Esfarjani, K., Opeil, C., Broido, D., Chen, G., & Ren, Z.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2013-07-30
- Volume
- 110
- Issue
- 33
- Pages
- 13261-13266
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W2031861623
- Cited by
- 789
- References
- 2
- FWCI
- 14.36
- Type
- journal article
- Language
- en
- Open access
- green
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- Zhang, Q., Liao, B., Lan, Y., Lukas, K., Liu, W., Esfarjani, K., Opeil, C., Broido, D., Chen, G., & Ren, Z. (2013). High thermoelectric performance by resonant dopant indium in nanostructured SnTe. Proceedings of the National Academy of Sciences. https://doi.org/10.1073/pnas.1305735110
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