Scaling of the Coercive Field with Thickness in Thin-Film Ferroelectrics
Open accessAbstract
Motivated by the observed thickness-scaling of the coercive field in ferroelectric films over five decades, we develop a statistical approach towards understanding the conceptual underpinnings of this behavior. Here the scaling exponent is determined by the field-dependence of a known and measured quantity, the nucleation rate per unit area. We end with a discussion of our initial assumptions and point to instances where they could no longer be applicable.
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Domain mobility is known to contribute to scaling effects on the coercive fields of ferroelectrics, where Ec ∝ d^-2/3, but this scaling becomes less accurate once grains are small enough to only contain a single domain, around 100 nm.
“Finally, domain mobility is known to contribute to scaling effects on the coercive fields of ferroelectrics, where Ec ∝ d -2/3 , 26 but this scaling becomes less accurate once grains are small enough to only contain a single domain, around 100 nm.27”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [26]
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Research works printed but not linked: 8
- Scott, J.F. Ferroelectric Memories (Springer-Verlag, Berlin, 2000).
- Dawber, M, Chandra, P., Littlewood P.B. and Scott J.F. "Depolarization Corrections to the Coercive Field in Thin-Film Ferroelectrics," J. Phys.: Cond. Matt 15, L393 (2003).
- Stadler, H.L. and Zachminidis, P.J. J. Appl. Phys. 29, 1285 (1958);
- Ducharme, S., Fridkin, V.M., Bune, A.V., Palto, S.P., Blinov, L.M., Petukhova, Nn. & Yudin, S.G. "Intrinsic ferroelectric coercive field," Physical Review Letters 84 pp. 175 -8 (2000)
- Shur, V. Ya., "Fast Polarization Reversal Process: Evolution of Ferroelectric Domain Structure in Thin Films," in C. Paz de Araujo, J.F. Scott, G.W. Taylor (eds.), Ferroelectric Thin Films: Synthesis and Basic Properties (Gordon and Breach, Amsterdam, 1996) 153 -192.
- Ganpule C.S, Roytburd, A.L., Nagarajan, V., Hill, B.K., Ogale, S.B., Williams, E.D., Ramesh, R. and Scott, J.F., "Polarization relaxation kinetics and 180 degrees domain wall dynamics in ferroelectric thin films," Phys. Rev. B 65 pp. 0141011-0141017 (2002).
- Scott, J.F. Ferroelectric Memories (Springer-Verlag, Berlin, 2000) p. 126-7.
- Lee, J.-K., Yi, J.Y., Hong, K.S. and Park, S.-E., "Polarization Switching in P b(Zn 0.3 Nb 0.6 )O 3 -5%P bT iO 3 Crystals," Jpn. J. Appl. Phys. 40, 6506 (2001).
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The other model antiferroelectric: PbHfO3 thin films from ALD precursors
Hanrahan, B., Milesi-Brault, C., Leff, A., Payne, A., Liu, S., Guennou, M., & Strnad, N. (2021) · APL Materials · doi:10.1063/5.0035730 · Cited by 19 · see citing works
- Authors
- CHANDRA, P., DAWBER, M., LITTLEWOOD, P. B., & SCOTT, J. F.
- Affiliations
- Rutgers, The State University of New Jersey (US)
- University of Cambridge (GB)
- Venue
- Ferroelectrics
- Publisher
- Informa UK Limited
- Published
- 2004-01
- Volume
- 313
- Issue
- 1
- Pages
- 7-13
- ISSN
- 0015-0193 (ISSN-L)
- 1563-5112
- OpenAlex
- W2001934218
- Cited by
- 70
- References
- 0
- Citations by year
- 2026: 7 · 2025: 6 · 2024: 8 · 2023: 3 · 2022: 7 · 2021: 6 · 2020: 3 · 2019: 4 · 2018: 3 · 2014: 3 · 2013: 1 · 2012: 1
- FWCI
- 2.50
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Ferroelectrics (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- Rutgers University Community Repository (Rutgers University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Biomedical Engineering › Dielectric materials and actuators
- Keywords
- coercive field, ferroelectric thin films, thickness scaling, scaling exponents, nucleation rate, statistical models
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