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Cited by 846

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

First principles materials design for semiconductor spintronics

Open access
Sato, K, Katayama-Yoshida, H·2002·Semiconductor Science and Technology

Abstract

Materials design of new functional diluted magnetic semiconductors (DMSs) is presented based on first principles calculations. The stability of the ferromagnetic state in ZnO-, ZnS-, ZnSe-, ZnTe-, GaAs- and GaN-based DMSs is investigated systematically and it is suggested that V- or Cr-doped ZnO, ZnS, ZnSe and ZnTe are candidates for high- T C ferromagnetic DMSs. V-, Cr- or Mn-doped GaAs and GaN are also candidates for high- T C ferromagnets. It is also shown that Fe-, Co- or Ni-doped ZnO is ferromagnetic. In particular, the carrier-induced ferromagnetism in ZnO-based DMSs is investigated and it is found that their magnetic states are controllable by changing the carrier density. The origin of the ferromagnetism in the DMSs is also discussed.

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Metadata

Authors
Sato, K., & Katayama-Yoshida, H.
Venue
Semiconductor Science and Technology
Published
2002-03-21
Volume
17
Issue
4
Pages
367-376
ISSN
0268-1242 (ISSN-L)
OpenAlex
W2008494215
Cited by
846
References
1
FWCI
34.39
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: First principles materials design for semiconductor spintronics. https://app.cochat.ai/papers/10.1088/0268-1242/17/4/309
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Sato, K., & Katayama-Yoshida, H. (2002). First principles materials design for semiconductor spintronics. Semiconductor Science and Technology. https://doi.org/10.1088/0268-1242/17/4/309

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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