Thermal conductivity of isotopically enriched71GaAs crystal
Abstract
A gallium arsenide bulk crystal highly enriched with gallium isotope 71 Ga to 99.40 at% has been grown using the seedless horizontal Bridgman method. The crystal has a total impurity concentration of about 2 × 10 17 atoms cm −3 and a high electrical resistivity ρ(300 K) ∼ 10 3 –10 8 Ω cm. Thermal conductivity measurements have been made from 90 K to 300 K of the enriched 71 GaAs sample and three different nat GaAs samples with a natural isotope composition of gallium. The 71 GaAs has a higher value of thermal conductivity due to reduced isotope scattering of phonons: the observed isotope effect amounts to 5% at room temperature, increasing to 13% with a temperature decrease down to 100 K.
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The bulk thermal conductivity of GaAs at T = 300 K is 50 W/mK.
“The bulk thermal conductivities of GaAs, GaN, AlN, and SiC (4H and 6H) at T = 300 K are 501213, 2301415, 28516, and 490 Wm−1K−11718, respectively.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [13]
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Resonant bonding leads to low lattice thermal conductivity
Lee, S., Esfarjani, K., Luo, T., Zhou, J., Tian, Z., & Chen, G. (2014) · Nature Communications · doi:10.1038/ncomms4525 · Cited by 679 · see citing works
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Lindsay, L., Broido, D. A., & Reinecke, T. L. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.095901 · Cited by 307 · see citing works
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. (2013) · Scientific Reports · doi:10.1038/srep02963 · Cited by 171 · see citing works
- Authors
- Inyushkin, A. V., Taldenkov, A. N., Yakubovsky, A. Y., Markov, A. V., Moreno-Garsia, L., & Sharonov, B. N.
- Affiliations
- Kurchatov Institute (RU)
- Venue
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Published
- 2003-06-11
- Volume
- 18
- Issue
- 7
- Pages
- 685-688
- ISSN
- 0268-1242 (ISSN-L)
- 1361-6641
- OpenAlex
- W1511363211
- Cited by
- 44
- References
- 0
- Citations by year
- 2026: 3 · 2024: 3 · 2023: 3 · 2022: 4 · 2021: 1 · 2020: 4 · 2019: 3 · 2018: 6 · 2017: 1 · 2016: 1 · 2015: 2 · 2014: 2 · 2013: 5 · 2012: 1
- FWCI
- 0.21
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Semiconductor Science and Technology (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Keywords
- GaAs, thermal conductivity, isotope effects, phonon scattering, isotope scattering, Bridgman crystal growth, high electrical resistivity, low-temperature thermal transport
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