Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures
Open accessAbstract
We review the spin splitting of subband energies caused by bulk and structure inversion asymmetries in semiconductor III–V and II–VI heterostructures. We present both theoretical and experimental aspects of the problem, and we discuss the spin splitting in the absence of external fields as well as its dependence on magnetic and electric fields. The theoretical description of conduction and valence subbands is based on a multiband k ⋅ p formalism. Experimental results are summarized, as obtained by beatings of the Shubnikov–de Haas oscillations, magnetoconductance in antilocalization regime, Raman scattering, spin resonance and cyclotron resonance. This review article is motivated by recent interest in spin properties of heterostructures in view of spintronic applications.
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Similar results for ZB are obtained if, instead of the spin splitting due to structure inversion asymmetry, one uses a two-dimensional version of the spin splitting due to crystal inversion asymmetry (Dresselhaus splitting).
“Similar results for ZB are obtained if, instead of the spin splitting due to structure inversion asymmetry, one uses a two-dimensional version of the spin splitting due to crystal inversion asymmetry (Dresselhaus splitting [30]) described by the Hamiltonian”
From Zitterbewegung (trembling motion) of electrons in semiconductors: a review (2011) · cites this paper as [30]
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References 87 · Cited by 172
Research works printed but not linked: 7
- Darr A, Kotthaus J P and Ando T 1976 Proc. 13th Int. Conf. Phys. Semicond. (Rome) ed F G Fumi (Amsterdam: North-Holland) p 774
- Ganichev S D et al 2003 Preprint cond-mat/0306521 v1 · arXiv
- Khodaparast G A, Doezema R E, Chung S J, Goldammer K J and Santos M B 2001 Proc. 10th Int. Conf. on Narrow Gap Semiconductors (Ishikawa, 2001) (IPAP Conf. Series 2) p 245
- Kikutani T, Gozu S and Yamada S 2001 Proc. 10th Int. Conf. on Narrow Gap Semiconductors (Ishikawa, 2001) (IPAP Conf. Series 2) p 233
- Pfeuffer-Jeschke A 2000 Bandstruktur und Landau-Niveaus quecksilberhaltiger II-VI Heterostrukturen PhD Thesis Wurzburg University
- Rossler U, Malcher F and Lommer G 1989 High Magnetic Fields in Semiconductor Physics II ed G Landwehr (Berlin: Springer) p 376
- Sizmann R, Chu J, Wollrab R and Koch F 1988 Proc. 19th Int. Conf. on the Physics of Semiconductors ed W Zawadzki (Warsaw: Polish Academy of Sciences) p 471
- Authors
- Zawadzki, W., & Pfeffer, P.
- Affiliations
- Institute of Physics (PL)
- ORCID
- Pfeffer, P
- Venue
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Published
- 2003-10-08
- Volume
- 19
- Issue
- 1
- Pages
- R1-R17
- ISSN
- 0268-1242 (ISSN-L)
- 1361-6641
- OpenAlex
- W2082766988
- Cited by
- 172
- References
- 87
- Citations by year
- 2026: 2 · 2025: 3 · 2024: 1 · 2023: 2 · 2022: 5 · 2021: 1 · 2020: 2 · 2019: 4 · 2018: 3 · 2017: 4 · 2016: 4 · 2015: 5 · 2014: 5 · 2013: 12 · 2012: 12
- FWCI
- 9.09
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Semiconductor Science and Technology (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Keywords
- spin splitting, subband energies, inversion asymmetry, semiconductor heterostructures, III-V semiconductors, II-VI semiconductors, bulk inversion asymmetry, structure inversion asymmetry, Shubnikov-de Haas oscillations, magnetoconductance, antilocalization, Raman scattering, spin resonance, cyclotron resonance, spintronics
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