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Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure
Open accessAbstract
We report on the fabrication and electroluminescence of an n-ZnO nanorod/p-Si heterojunction. ZnO nanorods were grown on p-type Si substrates employing an easy low-temperature aqueous solution method. As-grown ZnO nanorods showed good crystallinity and a preferable c axial orientation. Electroluminescent devices were constructed using high-molecular-weight polymers as the fill-in, and the I–V characteristics were diode-like. A typical electroluminescent spectrum of such an n-ZnO/p-Si heterojunction under forward bias was composed of a narrow ultraviolet peak centred at 387 nm and a broad green band at 535 nm, consistent with the photoluminescent spectrum. The intensity of the ultraviolet light grew more quickly than that of the green light with the increasing of bias.
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Cites
Single-nanowire electrically driven lasers
Duan, X., Huang, Y., Agarwal, R., & Lieber, C. M. (2003) · Nature · doi:10.1038/nature01353 · Cited by 2,447
Cited by
ZnO nanostructures for optoelectronics: Material properties and device applications
Djurišić, A. B., Ng, A. M. C., & Chen, X. Y. (2010) · Progress in Quantum Electronics · doi:10.1016/j.pquantelec.2010.04.001 · Cited by 1,078
ZnO: Material, Physics and Applications
Klingshirn, C. (2007) · ChemPhysChem · doi:10.1002/cphc.200700002 · Cited by 953
Metadata
- Authors
- Sun, H., Zhang, Q.-F., & Wu, J.-L.
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2006-04-07
- Volume
- 17
- Issue
- 9
- Pages
- 2271-2274
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W1995255246
- Cited by
- 160
- References
- 1
- FWCI
- 9.55
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Sun, H., Zhang, Q.-F., & Wu, J.-L. (2006). Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure. Nanotechnology. https://doi.org/10.1088/0957-4484/17/9/033
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