Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
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We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.
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NbO2 has sub-nanosecond switching speed, albeit with relatively high operation current (~300 μA) and voltage (~1.5 V) even with small device size.
“For instance, NbO2 could be a good candidate for the TRNG because of its sub-nanosecond switching speed, albeit with relatively high operation current ( ~ 300 µA) and voltage ( ~ 1.5 V) even with small device size20.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [20]
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References 59 · Cited by 385
- Authors
- Pickett, M. D., & Stanley Williams, R.
- Affiliations
- Hewlett-Packard (United States) (US)
- Corresponding author
- Pickett, Matthew D
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2012-05-03
- Volume
- 23
- Issue
- 21
- Pages
- 215202
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W1966025990
- Cited by
- 385
- References
- 59
- Citations by year
- 2026: 19 · 2025: 37 · 2024: 23 · 2023: 29 · 2022: 45 · 2021: 28 · 2020: 26 · 2019: 28 · 2018: 21 · 2017: 27 · 2016: 25 · 2015: 38 · 2014: 19 · 2013: 16 · 2012: 4
- FWCI
- 15.75
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- threshold switching, niobium oxide, negative differential resistance, Joule heating, metal-insulator transition, switching energy, switching speed, nanoscale memory, dynamic modeling
- MeSH terms
- Electric Conductivity, Equipment Design, Hot Temperature, Niobium, Oxides, Particle Size, Semiconductors, Signal Processing, Computer-Assisted, Equipment Failure Analysis, Nanotechnology, Nanostructures
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