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Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
Abstract
We investigated the effects of passivation on the electrical characteristics of molybdenum disulfide (MoS(2)) field effect transistors (FETs) under nitrogen, vacuum, and oxygen environments. When the MoS(2) FETs were exposed to oxygen, the on-current decreased and the threshold voltage shifted in the positive gate bias direction as a result of electrons being trapped by the adsorbed oxygen at the MoS(2) surface. In contrast, the electrical properties of the MoS(2) FETs changed only slightly in the different environments when a passivation layer was created using polymethyl methacrylate (PMMA). Specifically, the carrier concentration of unpassivated devices was reduced to 6.5 × 10(15) cm(-2) in oxygen from 16.3 × 10(15) cm(-2) in nitrogen environment. However, in PMMA-passivated devices, the carrier concentration remained nearly unchanged in the range of 1-3 × 10(15) cm(-2) regardless of the environment. Our study suggests that surface passivation is important for MoS(2)-based electronic devices.
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Cites
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Jiao, L., Zhang, L., Wang, X., Diankov, G., & Dai, H. (2009) · Nature · doi:10.1038/nature07919 · Cited by 2,441
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The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
Zhao, Q., Wang, W., Carrascoso-Plana, F., Jie, W., Wang, T., Castellanos-Gomez, A., & Frisenda, R. (2020) · Materials Horizons · doi:10.1039/c9mh01020c · Cited by 317
Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
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Metadata
- Authors
- Park, W., Park, J., Jang, J., Lee, H., Jeong, H., Cho, K., Hong, S., & Lee, T.
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2013-02-12
- Volume
- 24
- Issue
- 9
- Pages
- 095202
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2012585618
- Cited by
- 204
- References
- 1
- FWCI
- 9.18
- Type
- journal article
- Language
- en
- Open access
- closed
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- Park, W., Park, J., Jang, J., Lee, H., Jeong, H., Cho, K., Hong, S., & Lee, T. (2013). Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors. Nanotechnology. https://doi.org/10.1088/0957-4484/24/9/095202
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