The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Carbon nanotube growth by PECVD: a review
Open accessAbstract
Carbon nanotubes (CNTs), due to their unique electronic and extraordinary mechanical properties, have been receiving much attention for a wide variety of applications. Recently, plasma enhanced chemical vapour deposition (PECVD) has emerged as a key growth technique to produce vertically-aligned nanotubes. This paper reviews various plasma sources currently used in CNT growth, catalyst preparation and growth results. Since the technology is in its early stages, there is a general lack of understanding of growth mechanisms, the role of the plasma itself, and the identity of key species responsible for growth. This review is aimed at the low temperature plasma research community that has successfully addressed such issues, through plasma and surface diagnostics and modelling, in semiconductor processing and diamond thin film growth.
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Citations
Cites
Principles of Plasma Discharges and Materials Processing
Lieberman, M. A., & Lichtenberg, A. J. (2005) · doi:10.1002/0471724254 · Cited by 4,748
Cited by
Vladimirov, S. V., & Ostrikov, K. (2004) · Physics Reports · doi:10.1016/j.physrep.2003.12.003 · Cited by 332
Metadata
- Authors
- Meyyappan, M., Delzeit, L., Cassell, A., & Hash, D.
- Venue
- Plasma Sources Science and Technology
- Publisher
- IOP Publishing
- Published
- 2003-04-02
- Volume
- 12
- Issue
- 2
- Pages
- 205-216
- ISSN
- 0963-0252 (ISSN-L)
- 1361-6595
- OpenAlex
- W2034150944
- Cited by
- 780
- References
- 1
- FWCI
- 21.62
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Meyyappan, M., Delzeit, L., Cassell, A., & Hash, D. (2003). Carbon nanotube growth by PECVD: a review. Plasma Sources Science and Technology. https://doi.org/10.1088/0963-0252/12/2/312
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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