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Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices
Open accessAbstract
Abstract We demonstrate monolayer (1L) MoS 2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ∼10 13 cm −2 ) and temperatures (80–500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>10 12 cm −2 ). We demonstrate the highest current density reported to date (∼270 μ A μ m −1 or 44 MA cm −2 ) at 300 K for an 80 nm long device from CVD-grown 1L MoS 2 . Using simulations, we discuss what improvements of 1L MoS 2 are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.
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Citations
Cites
Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
Wang, X., Feng, H., Wu, Y., & Jiao, L. (2013) · Journal of the American Chemical Society · doi:10.1021/ja4013485 · Cited by 748
Cited by
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Metadata
- Authors
- Smithe, K. K. H., English, C. D., Suryavanshi, S. V., & Pop, E.
- Venue
- 2D Materials
- Publisher
- IOP Publishing
- Published
- 2016-11-30
- Volume
- 4
- Issue
- 1
- Pages
- 011009
- ISSN
- 2053-1583 (ISSN-L)
- OpenAlex
- W2486518419
- Cited by
- 162
- References
- 1
- FWCI
- 6.69
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Smithe, K. K. H., English, C. D., Suryavanshi, S. V., & Pop, E. (2016). Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices. 2D Materials. https://doi.org/10.1088/2053-1583/4/1/011009
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