Cited by 173Quantum and electron transport phenomenaSemiconductor Quantum Structures and DevicesSemiconductor materials and interfaces

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Longitudinal Magnetoresistance in the Quantum Limit

Argyres, P. N., Adams, E. N.·1956·Physical Review

Abstract

A study has been made of the effect of a magnetic field on the scattering of electrons in a semiconductor with spherical energy surfaces. The theory has been applied to longitudinal magnetoresistance in the case of a very large magnetic field and low temperatures so that all conduction electrons are in the ground oscillator state. Relaxation times for phonon and ionized impurity scattering have been calculated and the corresponding mobilities for a degenerate and nondegenerate semiconductor have been derived. Contrary to the zero magnetoresistance predicted by the usual Boltzmann theory, a field-dependent magnetoresistance is found. For a nondegenerate semiconductor and in the ionized impurity scattering range a negative magnetoresistance is predicted.

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Crossref · 10.1103/physrev.104.900

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Research works printed but not linked: 3

  1. J. McClure, 1956, Phys. Rev., 101, 1642, 10.1103/PhysRev.101.1642 · DOI
  2. V. S. Titeica, 1935, Ann. Physik, 22, 129, 10.1002/andp.19354140204 · DOI
  3. B. Davydov, 1940, J. Phys. (U.S.S.R.), 2, 147

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Metadata

Authors
Argyres, P. N., & Adams, E. N.
Affiliations
Westinghouse Electric (United States) (US)
Venue
Physical Review
Published
1956-11-15
Volume
104
Issue
4
Pages
900-908
ISSN
0031-899X (ISSN-L)
OpenAlex
W1998569627
Cited by
173
References
0
Citations by year
2026: 1 · 2024: 1 · 2023: 3 · 2022: 2 · 2021: 4 · 2020: 4 · 2019: 3 · 2018: 10 · 2017: 5 · 2016: 10 · 2015: 3 · 2014: 1 · 2012: 2
FWCI
8.30
Type
journal article
Language
en
Open access
closed
Locations
Physical Review (publishedVersion)
Topics
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Semiconductor materials and interfaces
Keywords
longitudinal magnetoresistance, quantum limit, electron scattering, phonon scattering, ionized impurity scattering, relaxation time, electron mobility, negative magnetoresistance, degenerate semiconductors, nondegenerate semiconductors, high magnetic fields, low temperature

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CoChat. (2026). Citation check: Longitudinal Magnetoresistance in the Quantum Limit. https://app.cochat.ai/papers/10.1103/physrev.104.900
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Argyres, P. N., & Adams, E. N. (1956). Longitudinal Magnetoresistance in the Quantum Limit. Physical Review. https://doi.org/10.1103/physrev.104.900