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Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide
Abstract
The infrared absorption between 0.85 and 25 microns has been measured as a function of carrier concentration for $n$-type single-crystal gallium arsenide. The absorption in the 1- to 5-micron region is compatible with a model in which there are minima \ensuremath{\sim}0.25 ev above the bottom of the conduction band. Infrared reflectivity measurements on several samples of different carrier concentrations were used to deduce the free-carrier contribution to the electric susceptibility and the electron effective mass. The results indicate a value for the mass of $(0.078\ifmmode\pm\else\textpm\fi{}0.004)m$ with an indication of an increase for the sample of highest carrier concentration. This value is substantially larger than previously reported values.
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Citations
Cited by
Semiconducting and other major properties of gallium arsenide
Blakemore, J. S. (1982) · Journal of Applied Physics · doi:10.1063/1.331665 · Cited by 2,503
Tanner, D. B. (2019) · doi:10.1017/9781316672778 · Cited by 106
Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides
Stanton, E. J., Chiles, J., Nader, N., Moody, G., Volet, N., Chang, L., Bowers, J. E., Woo Nam, S., & Mirin, R. P. (2020) · Optics Express · doi:10.1364/oe.389423 · Cited by 82
Metadata
- Authors
- Spitzer, W. G., & Whelan, J. M.
- Venue
- Physical Review
- Publisher
- American Physical Society (APS)
- Published
- 1959-04-01
- Volume
- 114
- Issue
- 1
- Pages
- 59-63
- ISSN
- 0031-899X (ISSN-L)
- OpenAlex
- W2062003973
- Cited by
- 423
- References
- 0
- FWCI
- 12.53
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide. https://app.cochat.ai/papers/10.1103/physrev.114.59
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- Spitzer, W. G., & Whelan, J. M. (1959). Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide. Physical Review. https://doi.org/10.1103/physrev.114.59
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