Band Edge Structure of PbS, PbSe, and PbTe
Abstract
The available experimental data on PbS, PbSe, and PbTe indicate that the valence-and conduction-band extrema of these semi-conductors occur at the $L$ point of the Brillouin zone. The nearly-free-electron model predicts that the valence and conduction states in the vicinity of the forbidden gap at $L$ each consist of three simple spin-degenerate bands. These bands interact strongly with one another and are relatively well isolated from other bands at $L$. The forms of the dispersion relations, $E(\mathrm{k})$, for these bands are determined using their symmetry and k\ifmmode\cdot\else\textperiodcentered\fi{}P perturbation theory, and depend strongly on their order and spacing. The conduction-and valence-band extrema may be either anisotropic, with small, highly concentration-dependent transverse masses, as found in PbTe, or more nearly isotropic, as found in PbS. PbSe is thought to be an intermediate case. The theoretical variation with carrier concentration of the cyclotron masses and extremal cross-sectional areas of the Fermi surface is derived from k\ifmmode\cdot\else\textperiodcentered\fi{}P perturbation theory for a simple model of the band structure in PbTe. This model is found to be in good agreement with most of the transport data on PbTe. However, the $g$ factor for the valence band of PbTe, deduced from measurements of the Shubnikov-de Haas effect, is in definite disagreement with the predictions of the simple model, and a consideration of all six bands is necessary in order to obtain complete agreement with experiment. It appears that the band edge structure of PbSe and PbS are similar to that of PbTe with only a difference in the spacing of the various valence and conduction bands.
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The band gap of Pb1-xSnxTe is a direct gap located at the L points of the Brillouin zone.
“The band gap of Pb 1 À x Sn x Te is found to be a direct gap located at the L points in the BZ 8 , which are the centres of the eight hexagonal faces of the BZ.”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [8]
The bulk band gap of Pb1-xSnxTe undergoes a band inversion when the Pb/Sn ratio is changed.
“The bulk band gap of Pb 1 À x Sn x Te alloy system undergoes a band inversion upon changing the Pb/Sn ratio 8-10 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [8]
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References 25 · Cited by 112
- Authors
- Dimmock, J. O., & Wright, G. B.
- Affiliations
- MIT Lincoln Laboratory (US)
- Venue
- Physical Review
- Publisher
- American Physical Society (APS)
- Published
- 1964-08-03
- Volume
- 135
- Issue
- 3A
- Pages
- A821-A830
- ISSN
- 0031-899X (ISSN-L)
- OpenAlex
- W2008843871
- Cited by
- 112
- References
- 25
- Citations by year
- 2024: 3 · 2023: 4 · 2022: 2 · 2021: 6 · 2020: 4 · 2019: 3 · 2018: 6 · 2017: 6 · 2016: 6 · 2015: 3 · 2014: 4 · 2013: 2 · 2012: 2
- FWCI
- 7.44
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical Review (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Keywords
- lead sulfide, lead selenide, PbTe, nearly free electron model, k·p perturbation theory, cyclotron mass, Fermi surface cross-section, general intelligence, Shubnikov-de Haas effect, band ordering, carrier density dependence
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