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Absorption Edge of Impure Gallium Arsenide
Abstract
The exponential absorption edge of GaAs may be interpreted as reflecting the presence of tails of states extending both intrinsic bands into the energy gap. The distribution of these tail states seems exponential, varying with energy as $\mathrm{exp}(\frac{E}{{E}_{0}})$ where ${E}_{0}$ increases with doping. ${E}_{0}$ starts rising rapidly with doping at lower concentrations in $n$-type material than in $p$-type GaAs. The temperature dependence of the absorption edge is larger than that of the energy gap; this can be attributed to a strongly temperature-dependent shift of the Fermi level in agreement with the model of tailing of states.
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Citations
Cited by
Semiconducting and other major properties of gallium arsenide
Blakemore, J. S. (1982) · Journal of Applied Physics · doi:10.1063/1.331665 · Cited by 2,503
Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs
Sajjad, R. N., Chern, W., Hoyt, J. L., & Antoniadis, D. A. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2603468 · Cited by 141
Metadata
- Authors
- Pankove, J. I.
- Venue
- Physical Review
- Publisher
- American Physical Society (APS)
- Published
- 1965-12-13
- Volume
- 140
- Issue
- 6A
- Pages
- A2059-A2065
- ISSN
- 0031-899X (ISSN-L)
- OpenAlex
- W1982017801
- Cited by
- 313
- References
- 0
- FWCI
- 8.82
- Type
- journal article
- Language
- en
- Open access
- closed
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- Pankove, J. I. (1965). Absorption Edge of Impure Gallium Arsenide. Physical Review. https://doi.org/10.1103/physrev.140.a2059
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
