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Cited by 1,632

The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.

Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures

Cohen, Marvin L., Bergstresser, T. K.·1966·Physical Review
DOI 10.1103/physrev.141.789
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Abstract

Pseudopotential form factors and band structures are determined for 14 semiconductors of the diamond and zincblende structures: AlSb, CdTe, GaAs, GaP, GaSb, Ge, InAs, InP, InSb, Si, Sn, ZnS, ZnSe, and ZnTe. Experimental values of the splitting of energy levels in the crystal are used. The form factors appear to be accurate to 0.01 Ry and yield energy bands which agree with experiment to within \ensuremath{\sim}0.01 Ry near the band gap and \ensuremath{\sim}0.04 Ry over a range of 1 Ry. For some of these substances these are the first band structures to be calculated.

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Metadata

Authors
Cohen, M. L., & Bergstresser, T. K.
Venue
Physical Review
Publisher
American Physical Society (APS)
Published
1966-01-14
Volume
141
Issue
2
Pages
789-796
ISSN
0031-899X (ISSN-L)
DOI
10.1103/physrev.141.789
OpenAlex
W2035326327
Cited by
1,632
References
11
FWCI
47.37
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures. https://app.cochat.ai/papers/10.1103/physrev.141.789
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Cohen, M. L., & Bergstresser, T. K. (1966). Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures. Physical Review. https://doi.org/10.1103/physrev.141.789

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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