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Elastic Properties of ZnS Structure Semiconductors

Martin, Richard M.·1970·Physical Review B

Abstract

A simple phenomenological theory of the elastic constants of sphalerite structure crystals is presented and shown to apply within reasonable errors to the known experimental constants. The theory utilizes a form for bond-stretching ($\ensuremath{\alpha}$) and bending ($\ensuremath{\beta}$) forces first used by Keating, to which are added effective point-ion Coulombic forces. Also it is pointed out that regularities in the experimental elastic constants of these crystals are readily explained in terms of the ionicity ${f}_{i}$ defined by Phillips and Van Vechten. Of particular note are the shear constants which decrease markedly with ionicity. It is found that this decrease is described quantitatively by $\frac{\ensuremath{\beta}}{\ensuremath{\alpha}}\ensuremath{\propto}(1\ensuremath{-}{f}_{i})$, which confirms the interpretation of $\ensuremath{\beta}$, since bond-bending forces should vanish in the ionic limit ${f}_{i}\ensuremath{\rightarrow}1$. Other equally simple formulas for the forces in terms of only the bond length and ${f}_{i}$ are shown to predict all the constants with a rms accuracy of 10%.

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Metadata

Authors
Martin, R. M.
Venue
Physical Review B
Published
1970-05-15
Volume
1
Issue
10
Pages
4005-4011
ISSN
0556-2805 (ISSN-L)
OpenAlex
W2064196262
Cited by
1,292
References
0
FWCI
53.44
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Elastic Properties of ZnS Structure Semiconductors. https://app.cochat.ai/papers/10.1103/physrevb.1.4005
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Martin, R. M. (1970). Elastic Properties of ZnS Structure Semiconductors. Physical Review B. https://doi.org/10.1103/physrevb.1.4005

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