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Cited by 476

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Electronic structure of a metal-semiconductor interface

Louie, Steven G., Cohen, Marvin L.·1976·Physical Review B

Abstract

The electronic structure of a jellium-Si interface is calculated using a jellium density corresponding to Al and self-consistent Si pseudopotentials. Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dangling-bond free-surface-like Si state. Truly localized interface states are also found but at lower energies. The calculated barrier height is in excellent agreement with recent experimental results.

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Metadata

Authors
Louie, S. G., & Cohen, M. L.
Venue
Physical Review B
Published
1976-03-15
Volume
13
Issue
6
Pages
2461-2469
ISSN
0556-2805 (ISSN-L)
OpenAlex
W2052604782
Cited by
476
References
1
FWCI
10.15
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Electronic structure of a metal-semiconductor interface. https://app.cochat.ai/papers/10.1103/physrevb.13.2461
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Louie, S. G., & Cohen, M. L. (1976). Electronic structure of a metal-semiconductor interface. Physical Review B. https://doi.org/10.1103/physrevb.13.2461

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