The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Electronic structure of a metal-semiconductor interface
Abstract
The electronic structure of a jellium-Si interface is calculated using a jellium density corresponding to Al and self-consistent Si pseudopotentials. Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dangling-bond free-surface-like Si state. Truly localized interface states are also found but at lower energies. The calculated barrier height is in excellent agreement with recent experimental results.
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Citations
Cites
Self-Consistent Equations Including Exchange and Correlation Effects
Kohn, W., & Sham, L. J. (1965) · Physical Review · doi:10.1103/physrev.140.a1133 · Cited by 64,135
Cited by
Self-consistent mixed-basis approach to the electronic structure of solids
Louie, S. G., Ho, K.-M., & Cohen, M. L. (1979) · Physical Review B · doi:10.1103/physrevb.19.1774 · Cited by 462
Self-citationNew model dielectric function and exchange-correlation potential for semiconductors and insulators
Levine, Z. H., & Louie, S. G. (1982) · Physical Review B · doi:10.1103/physrevb.25.6310 · Cited by 269
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Metadata
- Authors
- Louie, S. G., & Cohen, M. L.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1976-03-15
- Volume
- 13
- Issue
- 6
- Pages
- 2461-2469
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W2052604782
- Cited by
- 476
- References
- 1
- FWCI
- 10.15
- Type
- journal article
- Language
- en
- Open access
- closed
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- Louie, S. G., & Cohen, M. L. (1976). Electronic structure of a metal-semiconductor interface. Physical Review B. https://doi.org/10.1103/physrevb.13.2461
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