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Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

Chelikowsky, James R., Cohen, Marvin L.·1976·Physical Review B

Abstract

An empirical nonlocal pseudopotential scheme is employed to calculate the electronic structure of eleven semiconductors: Si, Ge, $\ensuremath{\alpha}\ensuremath{-}\mathrm{Sn}$, GaP, GaAs, GaSb, InP, InAs, InSb, ZnSe, and CdTe. Band structures, reflectivity spectra, electronic densities of states, and valence charge densities are presented and compared to experimental results. Improved optical gaps, optical critical-point topologies, valence-band widths, and valence charge distributions are obtained as compared to previous local pseudopotential results.

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Metadata

Authors
Chelikowsky, J. R., & Cohen, M. L.
Venue
Physical Review B
Published
1976-07-15
Volume
14
Issue
2
Pages
556-582
ISSN
0556-2805 (ISSN-L)
OpenAlex
W1973955035
Cited by
2,014
References
0
FWCI
26.27
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. https://app.cochat.ai/papers/10.1103/physrevb.14.556
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Chelikowsky, J. R., & Cohen, M. L. (1976). Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Physical Review B. https://doi.org/10.1103/physrevb.14.556

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