Cited by 89Advanced Thermoelectric Materials and DevicesSemiconductor materials and interfacesAdvanced Semiconductor Detectors and Materials

Anistropy of the Constant-Energy Surfaces inn-Type BiTe32andBi2Se3from Galvanomagnetic Coefficients

Caywood, L. P., Miller, G. R.·1970·Physical Review B

Abstract

Low-field galvanomagnetic coefficients have been measured on single crystals of ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ and ${\mathrm{Bi}}_{2}$${\mathrm{Se}}_{3}$ at 76 \ifmmode^\circ\else\textdegree\fi{}K in fields to 9 kG. Using a six-valley ellipsoid model in the isotropic relaxation-time approximation, the mass parameters of the ellipsoids are calculated for both compounds. The discrepancy between previously reported galvanomagnetic data and de Haas-van Alphen data for ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ can be minimized by recalculating the mass parameters from the galvanomagnetic data and by not assuming complete degeneracy. The experimental data on ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ are in agreement with those reported earlier. There is also very good evidence of second-band effects at high electron concentrations (> ${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$), as has been previously suggested. The constant-energy surfaces undergo an apparent change in shape between low- and high-concentration samples. Data on ${\mathrm{Bi}}_{2}$${\mathrm{Se}}_{3}$ indicate that the constant-energy surfaces are more spherical than in the case of ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$.

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Crossref · 10.1103/physrevb.2.3209

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References 29 · Cited by 89

Authors
Caywood, L. P., & Miller, G. R.
Affiliations
University of Utah (US)
Venue
Physical Review B
Published
1970-10-15
Volume
2
Issue
8
Pages
3209-3220
ISSN
0556-2805 (ISSN-L)
OpenAlex
W2064587959
Cited by
89
References
29
Citations by year
2023: 1 · 2020: 2 · 2019: 2 · 2018: 2 · 2017: 1 · 2016: 4 · 2015: 2 · 2014: 3 · 2013: 2 · 2012: 4
FWCI
3.86
Type
journal article
Language
en
Open access
closed
Locations
Physical review. B, Solid state (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
Keywords
Bi2Te3, Bi2Se3, constant energy surfaces, anisotropy, de Haas-van Alphen effect, electron concentration dependence, n-type semiconductors, low-temperature transport

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