Anistropy of the Constant-Energy Surfaces inn-Type BiTe32andBi2Se3from Galvanomagnetic Coefficients
Abstract
Low-field galvanomagnetic coefficients have been measured on single crystals of ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ and ${\mathrm{Bi}}_{2}$${\mathrm{Se}}_{3}$ at 76 \ifmmode^\circ\else\textdegree\fi{}K in fields to 9 kG. Using a six-valley ellipsoid model in the isotropic relaxation-time approximation, the mass parameters of the ellipsoids are calculated for both compounds. The discrepancy between previously reported galvanomagnetic data and de Haas-van Alphen data for ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ can be minimized by recalculating the mass parameters from the galvanomagnetic data and by not assuming complete degeneracy. The experimental data on ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ are in agreement with those reported earlier. There is also very good evidence of second-band effects at high electron concentrations (> ${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$), as has been previously suggested. The constant-energy surfaces undergo an apparent change in shape between low- and high-concentration samples. Data on ${\mathrm{Bi}}_{2}$${\mathrm{Se}}_{3}$ indicate that the constant-energy surfaces are more spherical than in the case of ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$.
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Bi2Se3 is a layered compound made of weakly van der Waals bonded Se-Bi-Se-Bi-Se five-layer sandwiches, yielding excellent basal plane cleavage and high-quality layered crystals.
“The resulting Se-Bi-Se-Bi-Se five layer sandwich is only weakly van der Waals bonded to the next sandwich, through the outer Se layers, yielding a material with excellent basal plane cleavage and excellent quality layered crystals both in the bulk and in thin films 19-21 .”
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References 29 · Cited by 89
- Authors
- Caywood, L. P., & Miller, G. R.
- Affiliations
- University of Utah (US)
- ORCID
- Miller, G. R.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1970-10-15
- Volume
- 2
- Issue
- 8
- Pages
- 3209-3220
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W2064587959
- Cited by
- 89
- References
- 29
- Citations by year
- 2023: 1 · 2020: 2 · 2019: 2 · 2018: 2 · 2017: 1 · 2016: 4 · 2015: 2 · 2014: 3 · 2013: 2 · 2012: 4
- FWCI
- 3.86
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical review. B, Solid state (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- Bi2Te3, Bi2Se3, constant energy surfaces, anisotropy, de Haas-van Alphen effect, electron concentration dependence, n-type semiconductors, low-temperature transport
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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