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Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO
Abstract
Semiempirical tight-binding electronic energy band structures of the following wurtzite materials are reported: AlN, CdS, CdSe, ZnS, and ZnO.Received 13 September 1982DOI:https://doi.org/10.1103/PhysRevB.28.935©1983 American Physical Society
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Citations
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Pecchia, A., & Carlo, A. D. (2004) · Reports on Progress in Physics · doi:10.1088/0034-4885/67/8/r04 · Cited by 297
Tolbert, S. H., Herhold, A. B., Johnson, C. S., & Alivisatos, A. P. (1994) · Physical Review Letters · doi:10.1103/physrevlett.73.3266 · Cited by 139
Metadata
- Authors
- Kobayashi, A., Sankey, O. F., Volz, S. M., & Dow, J. D.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1983-07-15
- Volume
- 28
- Issue
- 2
- Pages
- 935-945
- ISSN
- 0163-1829 (ISSN-L)
- OpenAlex
- W2001837011
- Cited by
- 219
- References
- 0
- FWCI
- 2.19
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kobayashi, A., Sankey, O. F., Volz, S. M., & Dow, J. D. (1983). Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO. Physical Review B. https://doi.org/10.1103/physrevb.28.935
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