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Cited by 586

The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.

Ab initio calculation of the macroscopic dielectric constant in silicon

Baroni, Stefano, Resta, Raffaele·1986·Physical Review B
DOI 10.1103/physrevb.33.7017
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Abstract

We perform a first-principles calculation of the static dielectric constant of Si in the framework of density-functional theory. The only essential approximation used in this work is the local-density approximation (LDA): norm-conserving pseudopotentials and large plane-wave basis sets are used, numerical roundoff and convergence errors are kept below 1%. The present calculation gives for the first time the ``exact'' value of the macroscopic dielectric constant at the LDA level. The theoretical value of ${\ensuremath{\epsilon}}_{\ensuremath{\infty}}$ is 12% higher than experiment.

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Metadata

Authors
Baroni, S., & Resta, R.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
1986-05-15
Volume
33
Issue
10
Pages
7017-7021
ISSN
0163-1829 (ISSN-L)
DOI
10.1103/physrevb.33.7017
OpenAlex
W1973029646
Cited by
586
References
15
FWCI
2.58
Type
journal article
Language
en
Open access
closed

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.